PHP54N06T Datasheet. Specs and Replacement

Type Designator: PHP54N06T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-220AB

PHP54N06T substitution

- MOSFET ⓘ Cross-Reference Search

 

PHP54N06T datasheet

 ..1. Size:211K  philips
php54n06t.pdf pdf_icon

PHP54N06T

PHP54N06T N-channel TrenchMOS standard level FET Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒

Detailed specifications: PHP225NQ04T, PHP24N03LT, PHP32N06LT, PHP34NQ11T, PHP36N03LT, PHP45N03LT, PHP45NQ15T, PHP52N06T, BS170, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E

Keywords - PHP54N06T MOSFET specs

 PHP54N06T cross reference

 PHP54N06T equivalent finder

 PHP54N06T pdf lookup

 PHP54N06T substitution

 PHP54N06T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility