All MOSFET. PHP54N06T Datasheet

 

PHP54N06T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP54N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220AB

 PHP54N06T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP54N06T Datasheet (PDF)

 ..1. Size:211K  philips
 php54n06t.pdf

PHP54N06T PHP54N06T

PHP54N06TN-channel TrenchMOS standard level FETRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top