PHP54N06T Datasheet and Replacement
Type Designator: PHP54N06T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-220AB
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PHP54N06T Datasheet (PDF)
php54n06t.pdf

PHP54N06TN-channel TrenchMOS standard level FETRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: S80N18RP | R6020ENZ1 | AONS1R6A70 | 24NM60G-T47S-T | NCEP1260F | FQD6N40TF | NCEP4090AGU
Keywords - PHP54N06T MOSFET datasheet
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History: S80N18RP | R6020ENZ1 | AONS1R6A70 | 24NM60G-T47S-T | NCEP1260F | FQD6N40TF | NCEP4090AGU



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