PHP54N06T Datasheet. Specs and Replacement
Type Designator: PHP54N06T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-220AB
PHP54N06T substitution
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PHP54N06T datasheet
php54n06t.pdf
PHP54N06T N-channel TrenchMOS standard level FET Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒
Detailed specifications: PHP225NQ04T, PHP24N03LT, PHP32N06LT, PHP34NQ11T, PHP36N03LT, PHP45N03LT, PHP45NQ15T, PHP52N06T, BS170, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E
Keywords - PHP54N06T MOSFET specs
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