All MOSFET. PHP54N06T Datasheet

 

PHP54N06T Datasheet and Replacement


   Type Designator: PHP54N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220AB
 

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PHP54N06T Datasheet (PDF)

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PHP54N06T

PHP54N06TN-channel TrenchMOS standard level FETRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Datasheet: PHP225NQ04T , PHP24N03LT , PHP32N06LT , PHP34NQ11T , PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , 18N50 , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E .

History: IRF6638 | SLF10N65A | SPMT16040F | 24NM60G-T47S-T | NCEAP40PT15D | EFC6605R | PD0903BV

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