All MOSFET. PHU108NQ03LT Datasheet

 

PHU108NQ03LT Datasheet and Replacement


   Type Designator: PHU108NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: IPAK
 

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PHU108NQ03LT Datasheet (PDF)

 ..1. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHU108NQ03LT

PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati

 9.1. Size:89K  philips
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PHU108NQ03LT

PHP/PHU101NQ03LTTrenchMOS logic level FETRev. 02 25 February 2003 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP101NQ03LT in SOT78 (TO-220AB)PHU101NQ03LT in SOT533 (I-PAK).2. Features Low gate charge Low on-state resistance.3. Applications Optimized as a con

Datasheet: PHP71NQ03LT , PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , 75N75 , PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T .

History: NDP04N60Z | 2SK888 | WMN30N80M3 | 2SJ605-Z | NVTJD4001N | SFF240J | BUZ83

Keywords - PHU108NQ03LT MOSFET datasheet

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