PHU108NQ03LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHU108NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: IPAK
PHU108NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHU108NQ03LT Datasheet (PDF)
phb108nq03lt phd108nq03lt phu108nq03lt.pdf
PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati
php101nq03lt phu101nq03lt.pdf
PHP/PHU101NQ03LTTrenchMOS logic level FETRev. 02 25 February 2003 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP101NQ03LT in SOT78 (TO-220AB)PHU101NQ03LT in SOT533 (I-PAK).2. Features Low gate charge Low on-state resistance.3. Applications Optimized as a con
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