PHU108NQ03LT Datasheet. Specs and Replacement

Type Designator: PHU108NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: IPAK

PHU108NQ03LT substitution

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PHU108NQ03LT datasheet

 ..1. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHU108NQ03LT

PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati... See More ⇒

 9.1. Size:89K  philips
 php101nq03lt phu101nq03lt.pdf pdf_icon

PHU108NQ03LT

PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK). 2. Features Low gate charge Low on-state resistance. 3. Applications Optimized as a con... See More ⇒

Detailed specifications: PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, 18N50, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.