PHU11NQ10T Datasheet. Specs and Replacement

Type Designator: PHU11NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: IPAK

PHU11NQ10T substitution

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PHU11NQ10T datasheet

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PHU11NQ10T

PHU11NQ10T TrenchMOS standard level FET Rev. 01 28 May 2002 Product data M3D445 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHU11NQ10T in SOT533 (I-pak). 2. Features TrenchMOS technology Fast switching Low on-state resistance. 3. Applications Relay driver High speed line... See More ⇒

Detailed specifications: PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, 20N50, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs