All MOSFET. PHU11NQ10T Datasheet

 

PHU11NQ10T Datasheet and Replacement


   Type Designator: PHU11NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: IPAK
 

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PHU11NQ10T Datasheet (PDF)

 ..1. Size:248K  philips
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PHU11NQ10T

PHU11NQ10TTrenchMOS standard level FETRev. 01 28 May 2002 Product dataM3D4451. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHU11NQ10T in SOT533 (I-pak).2. Features TrenchMOS technology Fast switching Low on-state resistance.3. Applications Relay driver High speed line

Datasheet: PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , 2N60 , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T .

History: PMZB200UNE

Keywords - PHU11NQ10T MOSFET datasheet

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