PHU11NQ10T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHU11NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 57.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10.9 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: IPAK
PHU11NQ10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHU11NQ10T Datasheet (PDF)
..1. Size:248K philips
phu11nq10t.pdf
phu11nq10t.pdf
PHU11NQ10TTrenchMOS standard level FETRev. 01 28 May 2002 Product dataM3D4451. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHU11NQ10T in SOT533 (I-pak).2. Features TrenchMOS technology Fast switching Low on-state resistance.3. Applications Relay driver High speed line
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