All MOSFET. PHU66NQ03LT Datasheet

 

PHU66NQ03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHU66NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: IPAK

 PHU66NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHU66NQ03LT Datasheet (PDF)

 ..1. Size:87K  philips
 php66nq03lt phu66nq03lt.pdf

PHU66NQ03LT PHU66NQ03LT

PHP/PHU66NQ03LTN-channel TrenchMOS logic level FETRev. 06 12 August 2004 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications DC-to-DC converters General purpose switching.1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PJS6812 | SI5N60-TN3-R | 2SK2134 | SUM85N15-19 | UT6302 | STP18NM80 | PHW7N60E

 

 
Back to Top