PHU66NQ03LT Datasheet. Specs and Replacement

Type Designator: PHU66NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: IPAK

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PHU66NQ03LT datasheet

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PHU66NQ03LT

PHP/PHU66NQ03LT N-channel TrenchMOS logic level FET Rev. 06 12 August 2004 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications DC-to-DC converters General purpose switching. 1... See More ⇒

Detailed specifications: PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, IRF520, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T

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