All MOSFET. PHU66NQ03LT Datasheet

 

PHU66NQ03LT Datasheet and Replacement


   Type Designator: PHU66NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: IPAK
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PHU66NQ03LT Datasheet (PDF)

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PHU66NQ03LT

PHP/PHU66NQ03LTN-channel TrenchMOS logic level FETRev. 06 12 August 2004 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications DC-to-DC converters General purpose switching.1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK456-100A | IPI47N10S-33 | STD5NK50Z | 2SK3354 | IRFZ48RS | ISCNH370W | WSD30L30DN

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