PHW80NQ10T Datasheet. Specs and Replacement

Type Designator: PHW80NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 263 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-247

PHW80NQ10T substitution

- MOSFET ⓘ Cross-Reference Search

 

PHW80NQ10T datasheet

 ..1. Size:96K  philips
 phw80nq10t.pdf pdf_icon

PHW80NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHW80NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 80 A g RDS(ON) 15 m s GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel enhancement mode PIN DESCRIPTION field-effect p... See More ⇒

Detailed specifications: PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, 2N60, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, PHX45NQ11T

Keywords - PHW80NQ10T MOSFET specs

 PHW80NQ10T cross reference

 PHW80NQ10T equivalent finder

 PHW80NQ10T pdf lookup

 PHW80NQ10T substitution

 PHW80NQ10T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility