All MOSFET. PHW80NQ10T Datasheet

 

PHW80NQ10T Datasheet and Replacement


   Type Designator: PHW80NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-247
 

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PHW80NQ10T Datasheet (PDF)

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PHW80NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHW80NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 80 AgRDS(ON) 15 msGENERAL DESCRIPTION PINNING SOT429 (TO247)N-channel enhancement mode PIN DESCRIPTIONfield-effect p

Datasheet: PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , IRF830 , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T .

History: AM3922N | TPD65R380C | IPB100N04S2-04 | FDJ128N | DMP6110SVT | IXTA1R6N100D2 | IRF1405ZPBF

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