PHX14NQ20T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX14NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 128 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO-220F
PHX14NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX14NQ20T Datasheet (PDF)
phf14nq20t phx14nq20t 2.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switchingID = 7.6 AgRDS(ON) 230 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using
phx14nq20t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switchingID = 7.6 AgRDS(ON) 230 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using
Datasheet: PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , MMD60R360PRH , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T .
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