PHX45NQ11T Datasheet. Specs and Replacement

Type Designator: PHX45NQ11T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-220F

PHX45NQ11T substitution

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PHX45NQ11T datasheet

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PHX45NQ11T

PHX45NQ11T N-channel TrenchMOS standard level FET Rev. 01 17 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Isolated package. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Qu... See More ⇒

Detailed specifications: PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, 7N60, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80, PJD2NA60, PJD2NA60H

Keywords - PHX45NQ11T MOSFET specs

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