PJD2NA60H Datasheet. Specs and Replacement

Type Designator: PJD2NA60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO-252

PJD2NA60H substitution

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PJD2NA60H datasheet

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PJD2NA60H

PPJU2NA60H / PJD2NA60H 600V N-Channel MOSFET 600 V 1.4 A Voltage Current Features RDS(ON), VGS@10V,ID@0.7A... See More ⇒

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PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60 600V N-Channel MOSFET 600 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@1A... See More ⇒

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PPJU2NA70 / PJD2NA70 / PJP2NA70 / PJF2NA70 700V N-Channel MOSFET 700 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@2A... See More ⇒

Detailed specifications: PHX45NQ11T, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80, PJD2NA60, K2611, PJD2NA70, PJD3NA50, PJD3NA80, PJD4NA60, PJD4NA65, PJD4NA70, PJD4NA90, PJD5NA50

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