PJD2NA60H MOSFET. Datasheet pdf. Equivalent
Type Designator: PJD2NA60H
Marking Code: D2NA60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.1 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 28 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: TO-252
PJD2NA60H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJD2NA60H Datasheet (PDF)
pjd2na60h pju2na60h.pdf
PPJU2NA60H / PJD2NA60H 600V N-Channel MOSFET 600 V 1.4 A Voltage Current Features RDS(ON), VGS@10V,ID@0.7A
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PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60 600V N-Channel MOSFET 600 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@1A
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PPJU2NA70 / PJD2NA70 / PJP2NA70 / PJF2NA70 700V N-Channel MOSFET 700 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@2A
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