All MOSFET. PJD3NA50 Datasheet

 

PJD3NA50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJD3NA50
   Marking Code: D3NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 41.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO-252

 PJD3NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJD3NA50 Datasheet (PDF)

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 pjd3na50 pju3na50.pdf

PJD3NA50 PJD3NA50

PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A

 8.1. Size:458K  panjit
 pjd3na80 pjf3na80 pjp3na80 pju3na80.pdf

PJD3NA50 PJD3NA50

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ATP104

 

 
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