PJD3NA50 Datasheet. Specs and Replacement

Type Designator: PJD3NA50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.6 nS

Cossⓘ - Output Capacitance: 41.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO-252

PJD3NA50 substitution

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PJD3NA50 datasheet

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PJD3NA50

PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A... See More ⇒

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PJD3NA50

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A... See More ⇒

Detailed specifications: PHX9NQ20T, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80, PJD2NA60, PJD2NA60H, PJD2NA70, RU7088R, PJD3NA80, PJD4NA60, PJD4NA65, PJD4NA70, PJD4NA90, PJD5NA50, PJD5NA80, PJD6NA40

Keywords - PJD3NA50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.