PJD5NA50 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJD5NA50
Marking Code: D5NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
Package: TO-252AA
PJD5NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJD5NA50 Datasheet (PDF)
pjd5na50 pjf5na50 pjp5na50 pju5na50.pdf
PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET 500 V 5 A Voltage Current Features RDS(ON), VGS@10V,ID@2.5A
pjd5na80 pjf5na80 pjp5na80 pju5na80.pdf
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET 800 V 5 A Voltage Current Features RDS(ON), VGS@10V,ID@ 2.5A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK673
History: 2SK673
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918