All MOSFET. PJD8NA50 Datasheet

 

PJD8NA50 Datasheet and Replacement


   Type Designator: PJD8NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-252AA
 

 PJD8NA50 substitution

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PJD8NA50 Datasheet (PDF)

 ..1. Size:430K  panjit
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PJD8NA50

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features RDS(ON), VGS@10V,ID@4A

Datasheet: PJD4NA70 , PJD4NA90 , PJD5NA50 , PJD5NA80 , PJD6NA40 , PJD6NA70 , PJD7NA60 , PJD7NA65 , 20N60 , PJF10NA60 , PJF10NA65 , PJF10NA80 , PJF12NA60 , PJF13NA50 , PJF2NA60 , PJF2NA70 , PJF3NA80 .

History: SSM3K16FU

Keywords - PJD8NA50 MOSFET datasheet

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