PJD8NA50 Datasheet. Specs and Replacement

Type Designator: PJD8NA50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-252AA

PJD8NA50 substitution

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PJD8NA50 datasheet

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PJD8NA50

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features RDS(ON), VGS@10V,ID@4A... See More ⇒

Detailed specifications: PJD4NA70, PJD4NA90, PJD5NA50, PJD5NA80, PJD6NA40, PJD6NA70, PJD7NA60, PJD7NA65, 20N60, PJF10NA60, PJF10NA65, PJF10NA80, PJF12NA60, PJF13NA50, PJF2NA60, PJF2NA70, PJF3NA80

Keywords - PJD8NA50 MOSFET specs

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