PJF10NA65 Datasheet. Specs and Replacement

Type Designator: PJF10NA65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: ITO-220AB-F

PJF10NA65 substitution

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PJF10NA65 datasheet

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PJF10NA65

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PPJP10NA80 / PJF10NA80 800V N-Channel MOSFET 800 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@ 5A... See More ⇒

Detailed specifications: PJD5NA50, PJD5NA80, PJD6NA40, PJD6NA70, PJD7NA60, PJD7NA65, PJD8NA50, PJF10NA60, IRF540, PJF10NA80, PJF12NA60, PJF13NA50, PJF2NA60, PJF2NA70, PJF3NA80, PJF4NA60, PJF4NA65

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