PJP10NA65 Datasheet. Specs and Replacement

Type Designator: PJP10NA65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220AB

PJP10NA65 substitution

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PJP10NA65 datasheet

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PJP10NA65

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PJP10NA65

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PJP10NA65

PPJP10NA80 / PJF10NA80 800V N-Channel MOSFET 800 V 10 A Voltage Current Features RDS(ON), VGS@10V,ID@ 5A... See More ⇒

Detailed specifications: PJF7NA65, PJF7NA80, PJF8NA50, PJF9NA90, PJN1NA50, PJN1NA60, PJN1NA60A, PJP10NA60, STP75NF75, PJP10NA80, PJP12NA60, PJP13NA50, PJP1NA80, PJP2NA60, PJP2NA70, PJP3NA80, PJP4NA60

Keywords - PJP10NA65 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.