PJP12NA60 Datasheet and Replacement
Type Designator: PJP12NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 167 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220AB
PJP12NA60 substitution
PJP12NA60 Datasheet (PDF)
pjf12na60 pjp12na60.pdf
PPJP12NA60 / PJF12NA60 600V N-Channel MOSFET 600 V 12 A Voltage Current Features RDS(ON), VGS@10V,ID@6A
Datasheet: PJF8NA50 , PJF9NA90 , PJN1NA50 , PJN1NA60 , PJN1NA60A , PJP10NA60 , PJP10NA65 , PJP10NA80 , IRF1010E , PJP13NA50 , PJP1NA80 , PJP2NA60 , PJP2NA70 , PJP3NA80 , PJP4NA60 , PJP4NA65 , PJP4NA70 .
Keywords - PJP12NA60 MOSFET datasheet
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