PJP12NA60 Datasheet. Specs and Replacement

Type Designator: PJP12NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220AB

PJP12NA60 substitution

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PJP12NA60 datasheet

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PJP12NA60

PPJP12NA60 / PJF12NA60 600V N-Channel MOSFET 600 V 12 A Voltage Current Features RDS(ON), VGS@10V,ID@6A... See More ⇒

Detailed specifications: PJF8NA50, PJF9NA90, PJN1NA50, PJN1NA60, PJN1NA60A, PJP10NA60, PJP10NA65, PJP10NA80, IRF9540N, PJP13NA50, PJP1NA80, PJP2NA60, PJP2NA70, PJP3NA80, PJP4NA60, PJP4NA65, PJP4NA70

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