PJP13NA50 Datasheet and Replacement
Type Designator: PJP13NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220AB
PJP13NA50 substitution
PJP13NA50 Datasheet (PDF)
pjf13na50 pjp13na50.pdf
PPJP13NA50 / PJF13NA50 500V N-Channel MOSFET 500 V 13 A Voltage Current Features RDS(ON), VGS@10V,ID@6.5A
Datasheet: PJF9NA90 , PJN1NA50 , PJN1NA60 , PJN1NA60A , PJP10NA60 , PJP10NA65 , PJP10NA80 , PJP12NA60 , IRF4905 , PJP1NA80 , PJP2NA60 , PJP2NA70 , PJP3NA80 , PJP4NA60 , PJP4NA65 , PJP4NA70 , PJP4NA90 .
Keywords - PJP13NA50 MOSFET datasheet
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History: 2SK812 | SFF50N30Z
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