PJP13NA50 Datasheet. Specs and Replacement

Type Designator: PJP13NA50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO-220AB

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PJP13NA50 datasheet

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PJP13NA50

PPJP13NA50 / PJF13NA50 500V N-Channel MOSFET 500 V 13 A Voltage Current Features RDS(ON), VGS@10V,ID@6.5A... See More ⇒

Detailed specifications: PJF9NA90, PJN1NA50, PJN1NA60, PJN1NA60A, PJP10NA60, PJP10NA65, PJP10NA80, PJP12NA60, IRF4905, PJP1NA80, PJP2NA60, PJP2NA70, PJP3NA80, PJP4NA60, PJP4NA65, PJP4NA70, PJP4NA90

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