PJP3NA80 Datasheet. Specs and Replacement

Type Designator: PJP3NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220AB

PJP3NA80 substitution

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PJP3NA80 datasheet

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PJP3NA80

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A... See More ⇒

Detailed specifications: PJP10NA60, PJP10NA65, PJP10NA80, PJP12NA60, PJP13NA50, PJP1NA80, PJP2NA60, PJP2NA70, IRFP260, PJP4NA60, PJP4NA65, PJP4NA70, PJP4NA90, PJP5NA50, PJP5NA80, PJP6NA40, PJP6NA70

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