PJP8NA50 Datasheet and Replacement
Type Designator: PJP8NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220AB
PJP8NA50 substitution
PJP8NA50 Datasheet (PDF)
pjd8na50 pjf8na50 pjp8na50 pju8na50.pdf
PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features RDS(ON), VGS@10V,ID@4A
Datasheet: PJP5NA50 , PJP5NA80 , PJP6NA40 , PJP6NA70 , PJP6NA90 , PJP7NA60 , PJP7NA65 , PJP7NA80 , 5N65 , PJP9NA90 , PJU1NA50 , PJU1NA60 , PJU1NA60A , PJU1NA80 , PJU2NA60 , PJU2NA60H , PJU2NA70 .
History: PMPB20EN | AP65SL380AIN
Keywords - PJP8NA50 MOSFET datasheet
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History: PMPB20EN | AP65SL380AIN
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