PJP8NA50 Datasheet. Specs and Replacement

Type Designator: PJP8NA50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220AB

PJP8NA50 substitution

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PJP8NA50 datasheet

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PJP8NA50

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features RDS(ON), VGS@10V,ID@4A... See More ⇒

Detailed specifications: PJP5NA50, PJP5NA80, PJP6NA40, PJP6NA70, PJP6NA90, PJP7NA60, PJP7NA65, PJP7NA80, CS150N03A8, PJP9NA90, PJU1NA50, PJU1NA60, PJU1NA60A, PJU1NA80, PJU2NA60, PJU2NA60H, PJU2NA70

Keywords - PJP8NA50 MOSFET specs

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