All MOSFET. PJU3NA50 Datasheet

 

PJU3NA50 MOSFET. Datasheet pdf. Equivalent

Type Designator: PJU3NA50

SMD Transistor Code: U3NA50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 34 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20.6 nS

Drain-Source Capacitance (Cd): 41.3 pF

Maximum Drain-Source On-State Resistance (Rds): 3.2 Ohm

Package: TO-251AB

PJU3NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJU3NA50 Datasheet (PDF)

1.1. pjd3na50 pju3na50.pdf Size:265K _panjit

PJU3NA50
PJU3NA50

PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features  RDS(ON), VGS@10V,ID@1.5A<3.2Ω  High switching speed  Improved dv/dt capability TO-252 TO-251AB  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

4.1. pjd3na80 pjf3na80 pjp3na80 pju3na80.pdf Size:458K _panjit

PJU3NA50
PJU3NA50

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features  RDS(ON), VGS@10V,ID@1.5A<4.8Ω ITO-220AB-F TO-220AB  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive. TO-252 TO-251AB  Green molding comp

 

Datasheet: PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , IRFZ44 , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T .

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