PJU8NA50 Datasheet and Replacement
Type Designator: PJU8NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-251AA
PJU8NA50 substitution
PJU8NA50 Datasheet (PDF)
pjd8na50 pjf8na50 pjp8na50 pju8na50.pdf
PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features RDS(ON), VGS@10V,ID@4A
Datasheet: PJU4NA70 , PJU4NA90 , PJU5NA50 , PJU5NA80 , PJU6NA40 , PJU6NA70 , PJU7NA60 , PJU7NA65 , IRF2807 , SFF054M , SFF054Z , SFF100N20 , SFF10N100 , SFF10N100B , SFF10N100M , SFF10N100N , SFF10N100P .
History: AP18P10AGH-HF | TPD60R1K5MFD
Keywords - PJU8NA50 MOSFET datasheet
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History: AP18P10AGH-HF | TPD60R1K5MFD
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