All MOSFET. PJU8NA50 Datasheet

 

PJU8NA50 MOSFET. Datasheet pdf. Equivalent

Type Designator: PJU8NA50

Marking Code: U8NA50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 114 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO-251AA

PJU8NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJU8NA50 Datasheet (PDF)

0.1. pjd8na50 pjf8na50 pjp8na50 pju8na50.pdf Size:430K _panjit

PJU8NA50
PJU8NA50

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET 500 V 8 A Voltage Current Features  RDS(ON), VGS@10V,ID@4A<0.9Ω ITO-220AB-F TO-220AB  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive. TO-252AA TO-251AA  Green molding comp

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