SFF100N20 Datasheet and Replacement
Type Designator: SFF100N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1050 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-3
SFF100N20 substitution
SFF100N20 Datasheet (PDF)
sff100n20.pdf
SFF100N20/3T Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 100 AMP , 200 Volts, 25 m DESIGNERS DATA SHEET Avalanche Rated N-channel Part Number / Ordering Information 1/ SFF100N20 ___ ___ ___ MOSFET Screening 2/ __ = Not Screened TX =
Datasheet: PJU5NA80 , PJU6NA40 , PJU6NA70 , PJU7NA60 , PJU7NA65 , PJU8NA50 , SFF054M , SFF054Z , K2611 , SFF10N100 , SFF10N100B , SFF10N100M , SFF10N100N , SFF10N100P , SFF10N100Z , SFF10N60 , SFF110S .
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History: S70N08ZS | 2SK3322-S
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