SFF100N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFF100N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-3
SFF100N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFF100N20 Datasheet (PDF)
sff100n20.pdf
SFF100N20/3T Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 100 AMP , 200 Volts, 25 m DESIGNERS DATA SHEET Avalanche Rated N-channel Part Number / Ordering Information 1/ SFF100N20 ___ ___ ___ MOSFET Screening 2/ __ = Not Screened TX =
sff10n60.pdf
SemiWell Semiconductor SFF10N60 N-Channel MOSFET Features RDS(ON) Max 0.75 ohm at VGS = 10V Gate Charge ( Typical 48 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918