SFF120-28Q Datasheet and Replacement
Type Designator: SFF120-28Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: 28-PIN-CLCC
SFF120-28Q substitution
SFF120-28Q Datasheet (PDF)
sff120-28q.pdf

PRELIMINARYSFF120-28QSOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-17739.2 AMPS100 VOLTSDESIGNER'S DATA SHEET0.35 QUAD N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast
sff12n60.pdf

SemiWell Semiconductor SFF12N60 N-Channel MOSFET Features RDS(ON) Max 0.65 ohm at VGS = 10V Gate Charge ( Typical 52 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h
Datasheet: SFF110S , SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SFF11N80P , SFF11N80Z , 2SK3918 , SFF12N60 , SFF130 , SFF130-28 , SFF130G , SFF130J , SFF1310M , SFF1310Z , SFF140 .
History: AP3R604GMT-HF | SM6358D1RL | ZXMN6A08E6TA | OSG65R900FF | STL86N3LLH6AG | RJK0364DPA | AON6262E
Keywords - SFF120-28Q MOSFET datasheet
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SFF120-28Q lookup
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History: AP3R604GMT-HF | SM6358D1RL | ZXMN6A08E6TA | OSG65R900FF | STL86N3LLH6AG | RJK0364DPA | AON6262E



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