All MOSFET. SFF120-28Q Datasheet

 

SFF120-28Q Datasheet and Replacement


   Type Designator: SFF120-28Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: 28-PIN-CLCC
 

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SFF120-28Q Datasheet (PDF)

 ..1. Size:175K  ssdi
 sff120-28q.pdf pdf_icon

SFF120-28Q

PRELIMINARYSFF120-28QSOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-17739.2 AMPS100 VOLTSDESIGNER'S DATA SHEET0.35 QUAD N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast

 9.1. Size:97K  semiwell
 sff12n60.pdf pdf_icon

SFF120-28Q

SemiWell Semiconductor SFF12N60 N-Channel MOSFET Features RDS(ON) Max 0.65 ohm at VGS = 10V Gate Charge ( Typical 52 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

Datasheet: SFF110S , SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SFF11N80P , SFF11N80Z , 2SK3918 , SFF12N60 , SFF130 , SFF130-28 , SFF130G , SFF130J , SFF1310M , SFF1310Z , SFF140 .

History: BLS65R165-W | UTC654 | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B

Keywords - SFF120-28Q MOSFET datasheet

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