All MOSFET. SFF12N60 Datasheet

 

SFF12N60 Datasheet and Replacement


   Type Designator: SFF12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220F
 

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SFF12N60 Datasheet (PDF)

 ..1. Size:97K  semiwell
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SFF12N60

SemiWell Semiconductor SFF12N60 N-Channel MOSFET Features RDS(ON) Max 0.65 ohm at VGS = 10V Gate Charge ( Typical 52 nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance h

 9.1. Size:175K  ssdi
 sff120-28q.pdf pdf_icon

SFF12N60

PRELIMINARYSFF120-28QSOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-17739.2 AMPS100 VOLTSDESIGNER'S DATA SHEET0.35 QUAD N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast

Datasheet: SFF116N10M , SFF116N10Z , SFF11N80B , SFF11N80M , SFF11N80N , SFF11N80P , SFF11N80Z , SFF120-28Q , MMD60R360PRH , SFF130 , SFF130-28 , SFF130G , SFF130J , SFF1310M , SFF1310Z , SFF140 , SFF140-28 .

History: FTK2306A | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | 2N7002ZDWG-AL6-R | SM140R50CT1TL

Keywords - SFF12N60 MOSFET datasheet

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