SFF23N60M MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFF23N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-254

SFF23N60M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFF23N60M Datasheet (PDF)

..1. Size:164K ssdi
sff23n60m sff23n60z.pdf

SFF23N60M Solid State Devices, Inc. SFF23N60Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 15 AMP, 600 Volts, 320 m Avalanche Rated N-channel TO-254 TO-254Z MOSFET Features: Advanced low gate charge process Lowest ON-resistance in the industry Av

6.1. Size:127K ssdi
sff23n60s1 sff23n60s2.pdf

SFF23N60S1 Solid State Devices, Inc. SFF23N60S2 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 21 AMP, 600 Volts, 320 m SMD1, 2 Avalanche Rated N-channel MOSFET Features: Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated

9.1. Size:163K ssdi
sff230g.pdf