All MOSFET. SFF27N50Z Datasheet

 

SFF27N50Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFF27N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO-254Z

 SFF27N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFF27N50Z Datasheet (PDF)

 ..1. Size:123K  ssdi
 sff27n50m sff27n50z.pdf

SFF27N50Z SFF27N50Z

SFF27N50M Solid State Devices, Inc. SFF27N50Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 27 AMP , 500 Volts, 175 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF27N50 ___ ___ ___ Screening 2/ MOSFET __ = Not Screene

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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