All MOSFET. SFF2N60-KR Datasheet

 

SFF2N60-KR MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFF2N60-KR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220F

 SFF2N60-KR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFF2N60-KR Datasheet (PDF)

 ..1. Size:210K  semiwell
 sff2n60-kr.pdf

SFF2N60-KR SFF2N60-KR

SemiWell Semiconductor SFF2N60-KR N-Channel MOSFET Features RDS(ON) Max 5.0ohm at VGS = 10V Gate Charge ( Typical 9.0nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ha

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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