All MOSFET. SFF2N60-KR Datasheet

 

SFF2N60-KR Datasheet and Replacement


   Type Designator: SFF2N60-KR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220F
 

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SFF2N60-KR Datasheet (PDF)

 ..1. Size:210K  semiwell
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SFF2N60-KR

SemiWell Semiconductor SFF2N60-KR N-Channel MOSFET Features RDS(ON) Max 5.0ohm at VGS = 10V Gate Charge ( Typical 9.0nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ha

Datasheet: SFF250ZDB , SFF250ZUB , SFF25P20M , SFF25P20S2I-01 , SFF25P20S2I-02 , SFF25P20S2I-03 , SFF27N50M , SFF27N50Z , IRF530 , SFF330-28 , SFF340 , SFF340-28 , SFF340C , SFF340J , SFF340M , SFF340Z , SFF35N20M .

History: JCS5AN50R

Keywords - SFF2N60-KR MOSFET datasheet

 SFF2N60-KR cross reference
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