SFF2N60-KR Datasheet. Specs and Replacement

Type Designator: SFF2N60-KR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220F

SFF2N60-KR substitution

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SFF2N60-KR datasheet

 ..1. Size:210K  semiwell
 sff2n60-kr.pdf pdf_icon

SFF2N60-KR

SemiWell Semiconductor SFF2N60-KR N-Channel MOSFET Features RDS(ON) Max 5.0ohm at VGS = 10V Gate Charge ( Typical 9.0nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance ha... See More ⇒

Detailed specifications: SFF250ZDB, SFF250ZUB, SFF25P20M, SFF25P20S2I-01, SFF25P20S2I-02, SFF25P20S2I-03, SFF27N50M, SFF27N50Z, IRF530, SFF330-28, SFF340, SFF340-28, SFF340C, SFF340J, SFF340M, SFF340Z, SFF35N20M

Keywords - SFF2N60-KR MOSFET specs

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