All MOSFET. SFF35N20Z Datasheet

 

SFF35N20Z Datasheet and Replacement


   Type Designator: SFF35N20Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-254Z
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SFF35N20Z Datasheet (PDF)

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SFF35N20Z

SFF35N20M Solid State Devices, Inc. SFF35N20Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate TO-254 and TO-254Z MOSFET Features: TRENCH GATE technology Lowest ON-resistance in the industry UIS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HRLF55N03K | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL | WMM07N65C4 | TPCA8047-H

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