All MOSFET. SFF35N20Z Datasheet

 

SFF35N20Z Datasheet and Replacement


   Type Designator: SFF35N20Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-254Z
 

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SFF35N20Z Datasheet (PDF)

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SFF35N20Z

SFF35N20M Solid State Devices, Inc. SFF35N20Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate TO-254 and TO-254Z MOSFET Features: TRENCH GATE technology Lowest ON-resistance in the industry UIS

Datasheet: SFF330-28 , SFF340 , SFF340-28 , SFF340C , SFF340J , SFF340M , SFF340Z , SFF35N20M , 2SK3568 , SFF40N10-28 , SFF40N30 , SFF40N30B , SFF40N30M , SFF40N30MDB , SFF40N30MUB , SFF40N30N , SFF40N30P .

History: UPA2820T1S | IPP65R310CFDA | FQI3P20TU | BLP03N10-T | HAT2142H | IPS031N03L | IXTA2R4N120P

Keywords - SFF35N20Z MOSFET datasheet

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