All MOSFET. IRFSZ20 Datasheet

 

IRFSZ20 Datasheet and Replacement


   Type Designator: IRFSZ20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F
 

 IRFSZ20 substitution

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IRFSZ20 Datasheet (PDF)

 8.1. Size:1006K  samsung
irfsz24a.pdf pdf_icon

IRFSZ20

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.1. Size:280K  1
irfsz14a.pdf pdf_icon

IRFSZ20

 9.2. Size:498K  samsung
irfsz34a.pdf pdf_icon

IRFSZ20

Advanced Power MOSFETFEATURESBVDSS = 60V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Datasheet: IRFS9640 , IRFS9641 , IRFS9642 , IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , 2SK3568 , IRFSZ22 , IRFSZ24 , IRFSZ24A , IRFSZ25 , IRFSZ30 , IRFSZ32 , IRFSZ34 , IRFSZ34A .

History: OSG60R060KT3ZF | STD35NF3LLT4 | IXTT140N10P | SSF2341E | AP50T10AGI-HF | CP640 | HM6N10PR

Keywords - IRFSZ20 MOSFET datasheet

 IRFSZ20 cross reference
 IRFSZ20 equivalent finder
 IRFSZ20 lookup
 IRFSZ20 substitution
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