All MOSFET. SFF730 Datasheet

 

SFF730 Datasheet and Replacement


   Type Designator: SFF730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

 SFF730 substitution

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SFF730 Datasheet (PDF)

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SFF730

SFF730SFF730SFF730SFF730Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures5.5A,400V, R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSF ET is produced using

Datasheet: SFF60P05Z , SFF60P05ZDB , SFF60P05ZUB , SFF6N100S1 , SFF7002KA2GW , SFF70N04S , SFF70N10M , SFF70N10Z , IRF640 , SFF740 , SFF75N05M , SFF75N05Z , SFF75N06-28 , SFF75N06M , SFF75N06Z , SFF75N08M , SFF75N08Z .

History: AUIRF9952Q | LSE80R680GT

Keywords - SFF730 MOSFET datasheet

 SFF730 cross reference
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