SFF7N60 Datasheet. Specs and Replacement

Type Designator: SFF7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 29 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

SFF7N60 substitution

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SFF7N60 datasheet

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SFF7N60

SFF7N60 SFF7N60 SFF7N60 SFF7N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7A,600V,R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri... See More ⇒

Detailed specifications: SFF75N06M, SFF75N06Z, SFF75N08M, SFF75N08Z, SFF75N10, SFF75N10B, SFF75N10N, SFF75N10P, IRFB4115, SFF801R2, SFF80N20M, SFF80N20MDB, SFF80N20MUB, SFF80N20N, SFF80N20NDB, SFF80N20NUB, SFF80N20P

Keywords - SFF7N60 MOSFET specs

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