SFF840 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFF840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
SFF840 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFF840 Datasheet (PDF)
sff840 sfp840.pdf
SemiWell SemiconductorSFF840N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 38nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (150C)3. Source General DescriptionTO-220FThis Powe
Datasheet: SFF80N20NDB , SFF80N20NUB , SFF80N20P , SFF80N20PDB , SFF80N20PUB , SFF80N20Z , SFF80N20ZDB , SFF80N20ZUB , 12N60 , SFF85N06M , SFF85N06Z , SFF9130 , SFF9130-28D , SFF9130J , SFF9130M , SFF9130Z , SIS415DNT .
History: SWMI4N65D
History: SWMI4N65D
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918