SFF840 Datasheet and Replacement
Type Designator: SFF840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
SFF840 substitution
SFF840 Datasheet (PDF)
sff840 sfp840.pdf
SemiWell SemiconductorSFF840N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 38nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (150C)3. Source General DescriptionTO-220FThis Powe
Datasheet: SFF80N20NDB , SFF80N20NUB , SFF80N20P , SFF80N20PDB , SFF80N20PUB , SFF80N20Z , SFF80N20ZDB , SFF80N20ZUB , IRLB4132 , SFF85N06M , SFF85N06Z , SFF9130 , SFF9130-28D , SFF9130J , SFF9130M , SFF9130Z , SIS415DNT .
History: SQM200N04-1M8 | PJD4NA60
Keywords - SFF840 MOSFET datasheet
SFF840 cross reference
SFF840 equivalent finder
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SFF840 substitution
SFF840 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SQM200N04-1M8 | PJD4NA60
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