RDX045N60FU6 Datasheet. Specs and Replacement

Type Designator: RDX045N60FU6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 16 nC

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220FM

RDX045N60FU6 substitution

- MOSFET ⓘ Cross-Reference Search

 

RDX045N60FU6 datasheet

 ..1. Size:82K  rohm
 rdx045n60fu6.pdf pdf_icon

RDX045N60FU6

RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching P... See More ⇒

Detailed specifications: SIS415DNT, SFF9140-28, SFF9140C, SFF9140J, SFF9140M, SFF9140Z, SFF9230M, SFF9230Z, CS150N03A8, SFF9240-28, SFF9240C, SFF9240J, SFF9240M, SFF9240Z, SFF9250L, SFFC40-28, SFFC50

Keywords - RDX045N60FU6 MOSFET specs

 RDX045N60FU6 cross reference

 RDX045N60FU6 equivalent finder

 RDX045N60FU6 pdf lookup

 RDX045N60FU6 substitution

 RDX045N60FU6 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.