All MOSFET. RDX045N60FU6 Datasheet

 

RDX045N60FU6 Datasheet and Replacement


   Type Designator: RDX045N60FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-220FM
 

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RDX045N60FU6 Datasheet (PDF)

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RDX045N60FU6

RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Low input capacitance. 1.33) Excellent resistance to damage from static electricity. 0.8(1)Gate 2.54 2.54 0.75 2.6(2)Drain (1) (2) (3) Applications(3)SourceSwitching P

Datasheet: SIS415DNT , SFF9140-28 , SFF9140C , SFF9140J , SFF9140M , SFF9140Z , SFF9230M , SFF9230Z , IRLB4132 , SFF9240-28 , SFF9240C , SFF9240J , SFF9240M , SFF9240Z , SFF9250L , SFFC40-28 , SFFC50 .

History: SFF9240-28 | HSW4602 | DMN2500UFB4 | IPD60R170CFD7 | IPD530N15N3 | IRFU48ZPBF | BSD816SN

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