SFM9110TF Datasheet and Replacement
Type Designator: SFM9110TF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT223
SFM9110TF substitution
SFM9110TF Datasheet (PDF)
sfm9110tf.pdf

SFM9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -1.0 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = -100V2n Lower RDS(ON) : 0.912 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
sfm9110.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V2 Lower RDS(ON) : 0.912 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristi
sfm9120.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V2 Lower RDS(ON) : 0.444 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristi
Datasheet: SFFX054M , SFFX054Z , SFH9250L , SFI9540 , SFL024 , SFL044J , SFL3200 , SFM9014TF , CS150N03A8 , SFP12N65 , SFP13N50 , SFP3710G , SFP50N06 , SFP50N06R , SFP5N50 , SFP630 , SFP634 .
History: SMN630LD | IRFB61N15D | SRT15N110HTC | SNN3100L10Q | JFPC2N80C | IRHY9230CM | STB40NS15
Keywords - SFM9110TF MOSFET datasheet
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History: SMN630LD | IRFB61N15D | SRT15N110HTC | SNN3100L10Q | JFPC2N80C | IRHY9230CM | STB40NS15



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