SFP3710G Datasheet. Specs and Replacement
Type Designator: SFP3710G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 3000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
SFP3710G substitution
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SFP3710G datasheet
sfp3710g.pdf
SFP3710G SFP3710G SFP3710G SFP3710G Silicon N-Channel MOSFET Features 59A,100V,R (Max 18m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 1180nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest techno... See More ⇒
Detailed specifications: SFI9540, SFL024, SFL044J, SFL3200, SFM9014TF, SFM9110TF, SFP12N65, SFP13N50, IRFZ24N, SFP50N06, SFP50N06R, SFP5N50, SFP630, SFP634, SFP640, SFP6N40, SFP70N06
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