All MOSFET. SFP3710G Datasheet

 

SFP3710G Datasheet and Replacement


   Type Designator: SFP3710G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
 

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SFP3710G Datasheet (PDF)

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SFP3710G

SFP3710GSFP3710GSFP3710GSFP3710GSilicon N-Channel MOSFETFeatures 59A,100V,R (Max 18m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 1180nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology. This latest techno

Datasheet: SFI9540 , SFL024 , SFL044J , SFL3200 , SFM9014TF , SFM9110TF , SFP12N65 , SFP13N50 , AON6380 , SFP50N06 , SFP50N06R , SFP5N50 , SFP630 , SFP634 , SFP640 , SFP6N40 , SFP70N06 .

History: STB3NK60ZT4 | SI6423DQ-T1 | RU30L15H | SWF13N60D | STB80NF55-06T4 | SWD6N80DE | KIA5610A

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