All MOSFET. SFP3710G Datasheet

 

SFP3710G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFP3710G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1180 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220

 SFP3710G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFP3710G Datasheet (PDF)

 ..1. Size:442K  winsemi
 sfp3710g.pdf

SFP3710G SFP3710G

SFP3710GSFP3710GSFP3710GSFP3710GSilicon N-Channel MOSFETFeatures 59A,100V,R (Max 18m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 1180nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology. This latest techno

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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