SFP50N06 Datasheet. Specs and Replacement

Type Designator: SFP50N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220

SFP50N06 substitution

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SFP50N06 datasheet

 ..1. Size:476K  winsemi
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SFP50N06

SFP50N06 SFP50N06 SFP50N06 SFP50N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max 22m )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using Win... See More ⇒

 0.1. Size:747K  winsemi
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SFP50N06

SFP50N06R SFP50N06R SFP50N06R SFP50N06R Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max0.023 )@V =10V DS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produced using Winsemi s trench layout-based process. This technology improv... See More ⇒

Detailed specifications: SFL024, SFL044J, SFL3200, SFM9014TF, SFM9110TF, SFP12N65, SFP13N50, SFP3710G, 2N60, SFP50N06R, SFP5N50, SFP630, SFP634, SFP640, SFP6N40, SFP70N06, SFP730

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