All MOSFET. SFP50N06 Datasheet

 

SFP50N06 Datasheet and Replacement


   Type Designator: SFP50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220
 

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SFP50N06 Datasheet (PDF)

 ..1. Size:476K  winsemi
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SFP50N06

SFP50N06SFP50N06SFP50N06SFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max 22m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Win

 0.1. Size:747K  winsemi
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SFP50N06

SFP50N06RSFP50N06RSFP50N06RSFP50N06RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.023)@V =10VDS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis trench layout-basedprocess. This technology improv

Datasheet: SFL024 , SFL044J , SFL3200 , SFM9014TF , SFM9110TF , SFP12N65 , SFP13N50 , SFP3710G , IRF830 , SFP50N06R , SFP5N50 , SFP630 , SFP634 , SFP640 , SFP6N40 , SFP70N06 , SFP730 .

History: H5N60D | FMV05N60E

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