SFP50N06R Datasheet and Replacement
Type Designator: SFP50N06R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
SFP50N06R substitution
SFP50N06R Datasheet (PDF)
sfp50n06r.pdf

SFP50N06RSFP50N06RSFP50N06RSFP50N06RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.023)@V =10VDS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis trench layout-basedprocess. This technology improv
sfp50n06.pdf

SFP50N06SFP50N06SFP50N06SFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max 22m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Win
Datasheet: SFL044J , SFL3200 , SFM9014TF , SFM9110TF , SFP12N65 , SFP13N50 , SFP3710G , SFP50N06 , IRFB31N20D , SFP5N50 , SFP630 , SFP634 , SFP640 , SFP6N40 , SFP70N06 , SFP730 , SFP730D .
History: KP8M10
Keywords - SFP50N06R MOSFET datasheet
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History: KP8M10



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