All MOSFET. SFP50N06R Datasheet

 

SFP50N06R Datasheet and Replacement


   Type Designator: SFP50N06R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
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SFP50N06R Datasheet (PDF)

 ..1. Size:747K  winsemi
 sfp50n06r.pdf pdf_icon

SFP50N06R

SFP50N06RSFP50N06RSFP50N06RSFP50N06RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.023)@V =10VDS(on) GS Gate Charge(Typical 25nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis trench layout-basedprocess. This technology improv

 6.1. Size:476K  winsemi
 sfp50n06.pdf pdf_icon

SFP50N06R

SFP50N06SFP50N06SFP50N06SFP50N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max 22m)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 31nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Win

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CSD18542KCS | IPI47N10S-33 | FDMS3602AS | HGK210N20S | IRFZ48RS | F5021H | WSD30L30DN

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