SFP640 Datasheet. Specs and Replacement

Type Designator: SFP640  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

SFP640 substitution

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SFP640 datasheet

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SFP640

SFP640 SFP640 SFP640 SFP640 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,200V,R (Max 0.18 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced using ... See More ⇒

Detailed specifications: SFP12N65, SFP13N50, SFP3710G, SFP50N06, SFP50N06R, SFP5N50, SFP630, SFP634, IRFB31N20D, SFP6N40, SFP70N06, SFP730, SFP730D, SFP740, SFP75N08R, SFP830, SFP830D

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