All MOSFET. SFP640 Datasheet

 

 

SFP640 Datasheet and Replacement


   Type Designator: SFP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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SFP640 Datasheet (PDF)

 ..1. Size:767K  winsemi
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SFP640

SFP640SFP640SFP640SFP640Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,200V,R (Max 0.18)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using

Datasheet: SFP12N65 , SFP13N50 , SFP3710G , SFP50N06 , SFP50N06R , SFP5N50 , SFP630 , SFP634 , IRFB31N20D , SFP6N40 , SFP70N06 , SFP730 , SFP730D , SFP740 , SFP75N08R , SFP830 , SFP830D .

History: FQB3N60CTM

Keywords - SFP640 MOSFET datasheet

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