SFP6N40 Datasheet. Specs and Replacement

Type Designator: SFP6N40  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

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SFP6N40 datasheet

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SFP6N40

SemiWell Semiconductor SFP6N40 N-Channel MOSFET Features RDS(ON) Max 1.0 ohm at VGS = 10V Gate Charge ( Typical 18nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have... See More ⇒

Detailed specifications: SFP13N50, SFP3710G, SFP50N06, SFP50N06R, SFP5N50, SFP630, SFP634, SFP640, STP65NF06, SFP70N06, SFP730, SFP730D, SFP740, SFP75N08R, SFP830, SFP830D, SFP840

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