SFP6N40 Datasheet and Replacement
Type Designator: SFP6N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
SFP6N40 substitution
SFP6N40 Datasheet (PDF)
sfp6n40.pdf

SemiWell Semiconductor SFP6N40 N-Channel MOSFET Features RDS(ON) Max 1.0 ohm at VGS = 10V Gate Charge ( Typical 18nC) Improve dv/dt capability, Fast switching 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have
Datasheet: SFP13N50 , SFP3710G , SFP50N06 , SFP50N06R , SFP5N50 , SFP630 , SFP634 , SFP640 , IRFZ48N , SFP70N06 , SFP730 , SFP730D , SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 .
History: STI300N4F6 | SRT10N047HD56
Keywords - SFP6N40 MOSFET datasheet
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History: STI300N4F6 | SRT10N047HD56



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