SFP70N06 Datasheet. Specs and Replacement

Type Designator: SFP70N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO220

SFP70N06 substitution

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SFP70N06 datasheet

 ..1. Size:546K  samsung
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SFP70N06

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.009 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 ..2. Size:565K  winsemi
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SFP70N06

SFP70N06 SFP70N06 SFP70N06 SFP70N06 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 70A,60V, R (Max0.014 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175 ) General Description... See More ⇒

Detailed specifications: SFP3710G, SFP50N06, SFP50N06R, SFP5N50, SFP630, SFP634, SFP640, SFP6N40, IRF1405, SFP730, SFP730D, SFP740, SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L

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