All MOSFET. SFP70N06 Datasheet

 

SFP70N06 Datasheet and Replacement


   Type Designator: SFP70N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

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SFP70N06 Datasheet (PDF)

 ..1. Size:546K  samsung
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SFP70N06

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.012 Rugged Gate Oxide Technology Lower Input CapacitanceID = 70 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.009 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 ..2. Size:565K  winsemi
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SFP70N06

SFP70N06SFP70N06SFP70N06SFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, R (Max0.014)@V =10VDS(on) GS Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General Description

Datasheet: SFP3710G , SFP50N06 , SFP50N06R , SFP5N50 , SFP630 , SFP634 , SFP640 , SFP6N40 , NCEP15T14 , SFP730 , SFP730D , SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 , SFP9640L .

History: KIA3510A-263 | SRT03N011L | KIA2305 | SWHA7N65M | SI7100DN | SSP60R190SFD2 | IPN60R360P7S

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