All MOSFET. SFP75N08R Datasheet

 

SFP75N08R Datasheet and Replacement


   Type Designator: SFP75N08R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 173 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
 

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SFP75N08R Datasheet (PDF)

 ..1. Size:1259K  winsemi
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SFP75N08R

SFP75N08RSFP75N08RSFP75N08RSFP75N08RSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures R (Max0.015)@V =10vDS(on) GS Gate Charge(Typical 80 nC) Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produced using Winsemis advancedplanar stripe,DMOS technology. This lates

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPW60R075CPA

Keywords - SFP75N08R MOSFET datasheet

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