SFP75N08R Datasheet. Specs and Replacement

Type Designator: SFP75N08R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 80 nC

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO220

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SFP75N08R datasheet

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SFP75N08R

SFP75N08R SFP75N08R SFP75N08R SFP75N08R Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features R (Max0.015 )@V =10v DS(on) GS Gate Charge(Typical 80 nC) Maximum Junction Temperature Range(175 ) General Description This Power MOSFET is produced using Winsemi s advanced planar stripe,DMOS technology. This lates... See More ⇒

Detailed specifications: SFP630, SFP634, SFP640, SFP6N40, SFP70N06, SFP730, SFP730D, SFP740, IRF830, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF, SFR9024TM, SFR9034TF

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