All MOSFET. SFP9N50 Datasheet

 

SFP9N50 Datasheet and Replacement


   Type Designator: SFP9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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SFP9N50 Datasheet (PDF)

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SFP9N50

SFP9N50SFP9N50SFP9N50SFP9N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.85)@V =10VDS(on) GS Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

Datasheet: SFP730 , SFP730D , SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 , SFP9640L , IRF9640 , SFR9014TF , SFR9024TM , SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM .

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