IRFSZ45 MOSFET Datasheet: N-Ch, 60V, 35A. Full specification with pinout and replacement list

IRFSZ45 Specs and Replacement

Type Designator: IRFSZ45

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO220F

IRFSZ45 substitution

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IRFSZ45 datasheet

8.1. Size:42K 1
irfsz20 irfsz24 irfsz30 irfsz34 irfsz40 irfsz44.pdf pdf_icon

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8.2. Size:1018K samsung
irfsz44a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

9.1. Size:280K 1
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9.2. Size:1006K samsung
irfsz24a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒