All MOSFET. SQM18N33-160H Datasheet

 

SQM18N33-160H MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQM18N33-160H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-263

 SQM18N33-160H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQM18N33-160H Datasheet (PDF)

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 sqm18n33-160h.pdf

SQM18N33-160H SQM18N33-160H

SQM18N33-160Hwww.vishay.comVishay SiliconixAutomotive N-Channel 330 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 330 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.160 AEC-Q101 QualifiedID (A) 31 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance plea

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