All MOSFET. SQM18N33-160H Datasheet

 

SQM18N33-160H Datasheet and Replacement


   Type Designator: SQM18N33-160H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-263
 

 SQM18N33-160H substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQM18N33-160H Datasheet (PDF)

 ..1. Size:170K  vishay
 sqm18n33-160h.pdf pdf_icon

SQM18N33-160H

SQM18N33-160Hwww.vishay.comVishay SiliconixAutomotive N-Channel 330 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 330 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.160 AEC-Q101 QualifiedID (A) 31 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance plea

Datasheet: SQM120N06-04L , SQM120N06-06 , SQM120N06-3M5L , SQM120N08-05 , SQM120N10-09 , SQM120N10-3M8 , SQM120P04-04L , SQM120P06-07L , 5N60 , SQM200N04-1M1L , SQM200N04-1M7L , SQM200N04-1M8 , SQM25N15-52 , SQM35N30-97 , SQM40N10-30 , SQM40N15-38 , SQM40P10-40L .

History: AP40N03GP | HX4N60 | AM20N10-115D | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

Keywords - SQM18N33-160H MOSFET datasheet

 SQM18N33-160H cross reference
 SQM18N33-160H equivalent finder
 SQM18N33-160H lookup
 SQM18N33-160H substitution
 SQM18N33-160H replacement

 

 
Back to Top

 


 
.