SQM18N33-160H Datasheet. Specs and Replacement

Type Designator: SQM18N33-160H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 330 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-263

SQM18N33-160H substitution

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SQM18N33-160H datasheet

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SQM18N33-160H

SQM18N33-160H www.vishay.com Vishay Siliconix Automotive N-Channel 330 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 330 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.160 AEC-Q101 Qualified ID (A) 31 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance plea... See More ⇒

Detailed specifications: SQM120N06-04L, SQM120N06-06, SQM120N06-3M5L, SQM120N08-05, SQM120N10-09, SQM120N10-3M8, SQM120P04-04L, SQM120P06-07L, IRLB4132, SQM200N04-1M1L, SQM200N04-1M7L, SQM200N04-1M8, SQM25N15-52, SQM35N30-97, SQM40N10-30, SQM40N15-38, SQM40P10-40L

Keywords - SQM18N33-160H MOSFET specs

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