All MOSFET. SQM18N33-160H Datasheet

 

SQM18N33-160H Datasheet and Replacement


   Type Designator: SQM18N33-160H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-263
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SQM18N33-160H Datasheet (PDF)

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SQM18N33-160H

SQM18N33-160Hwww.vishay.comVishay SiliconixAutomotive N-Channel 330 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 330 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.160 AEC-Q101 QualifiedID (A) 31 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance plea

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | DM12N65C | SPD04N60S5 | NTD4855N-1G | FCPF7N60YDTU | SM6A12NSFP

Keywords - SQM18N33-160H MOSFET datasheet

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