SQM25N15-52 Datasheet and Replacement
Type Designator: SQM25N15-52
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO-263
SQM25N15-52 substitution
SQM25N15-52 Datasheet (PDF)
sqm25n15-52.pdf

SQM25N15-52www.vishay.comVishay SiliconixAutomotive N-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 150 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.052 100 % Rg and UIS TestedID (A) 25 AEC-Q101 QualifieddConfiguration Single Material categorization:For definitions of compliance pleas
Datasheet: SQM120N10-09 , SQM120N10-3M8 , SQM120P04-04L , SQM120P06-07L , SQM18N33-160H , SQM200N04-1M1L , SQM200N04-1M7L , SQM200N04-1M8 , 2SK3568 , SQM35N30-97 , SQM40N10-30 , SQM40N15-38 , SQM40P10-40L , SQM47N10-24L , SQM50020EL , SQM50N04-4M0L , SQM50N04-4M1 .
History: FDMC8010ET30 | SSM03N70GJ
Keywords - SQM25N15-52 MOSFET datasheet
SQM25N15-52 cross reference
SQM25N15-52 equivalent finder
SQM25N15-52 lookup
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History: FDMC8010ET30 | SSM03N70GJ



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