SQM25N15-52 Datasheet. Specs and Replacement

Type Designator: SQM25N15-52  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO-263

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SQM25N15-52 datasheet

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SQM25N15-52

SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 150 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.052 100 % Rg and UIS Tested ID (A) 25 AEC-Q101 Qualifiedd Configuration Single Material categorization For definitions of compliance pleas... See More ⇒

Detailed specifications: SQM120N10-09, SQM120N10-3M8, SQM120P04-04L, SQM120P06-07L, SQM18N33-160H, SQM200N04-1M1L, SQM200N04-1M7L, SQM200N04-1M8, 4435, SQM35N30-97, SQM40N10-30, SQM40N15-38, SQM40P10-40L, SQM47N10-24L, SQM50020EL, SQM50N04-4M0L, SQM50N04-4M1

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