All MOSFET. SQM35N30-97 Datasheet

 

SQM35N30-97 Datasheet and Replacement


   Type Designator: SQM35N30-97
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.097 Ohm
   Package: TO-263
 

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SQM35N30-97 Datasheet (PDF)

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SQM35N30-97

SQM35N30-97www.vishay.comVishay SiliconixAutomotive N-Channel 300 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 300 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.097 AEC-Q101 qualified dID (A) 35 100 % Rg and UIS testedConfiguration Single Material categorization: Package TO-263for definitions of co

Datasheet: SQM120N10-3M8 , SQM120P04-04L , SQM120P06-07L , SQM18N33-160H , SQM200N04-1M1L , SQM200N04-1M7L , SQM200N04-1M8 , SQM25N15-52 , AON7410 , SQM40N10-30 , SQM40N15-38 , SQM40P10-40L , SQM47N10-24L , SQM50020EL , SQM50N04-4M0L , SQM50N04-4M1 , SQM50N04-5M0 .

History: R6020ENZ1 | PDN3912S | 2SK1234 | NTTFS3A08PZTAG | MSU12N60F | IRF830PBF | NP89N04NUK

Keywords - SQM35N30-97 MOSFET datasheet

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