SQM35N30-97 Datasheet. Specs and Replacement

Type Designator: SQM35N30-97  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.097 Ohm

Package: TO-263

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SQM35N30-97 datasheet

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SQM35N30-97

SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 300 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.097 AEC-Q101 qualified d ID (A) 35 100 % Rg and UIS tested Configuration Single Material categorization Package TO-263 for definitions of co... See More ⇒

Detailed specifications: SQM120N10-3M8, SQM120P04-04L, SQM120P06-07L, SQM18N33-160H, SQM200N04-1M1L, SQM200N04-1M7L, SQM200N04-1M8, SQM25N15-52, SPP20N60C3, SQM40N10-30, SQM40N15-38, SQM40P10-40L, SQM47N10-24L, SQM50020EL, SQM50N04-4M0L, SQM50N04-4M1, SQM50N04-5M0

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.