All MOSFET. SQM35N30-97 Datasheet

 

SQM35N30-97 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQM35N30-97
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.097 Ohm
   Package: TO-263

 SQM35N30-97 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQM35N30-97 Datasheet (PDF)

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 sqm35n30-97.pdf

SQM35N30-97 SQM35N30-97

SQM35N30-97www.vishay.comVishay SiliconixAutomotive N-Channel 300 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 300 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.097 AEC-Q101 qualified dID (A) 35 100 % Rg and UIS testedConfiguration Single Material categorization: Package TO-263for definitions of co

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFG75N05E

 

 
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