All MOSFET. SQM60N20-35 Datasheet

 

SQM60N20-35 Datasheet and Replacement


   Type Designator: SQM60N20-35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-263
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SQM60N20-35 Datasheet (PDF)

 ..1. Size:220K  vishay
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SQM60N20-35

SQM60N20-35www.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 200 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.035 AEC-Q101 qualified dID (A) 60 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co

 8.1. Size:698K  vishay
 sqm60n06-15.pdf pdf_icon

SQM60N20-35

SQM60N06-15www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal Resistance AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Charac

 8.2. Size:166K  vishay
 sqm60n06.pdf pdf_icon

SQM60N20-35

SQM60N06-15Vishay SiliconixAutomotiveN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.015 TrenchFET Power MOSFETID (A) 56 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 Qualifiedd Characterization OngoingD Compliant to RoHS D

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