SQP100P06-9M3L Datasheet. Specs and Replacement

Type Designator: SQP100P06-9M3L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: TO-220AB

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SQP100P06-9M3L datasheet

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SQP100P06-9M3L

SQP100P06-9m3L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.0093 AEC-Q101 qualified d RDS(on) ( ) at VGS = -4.5 V 0.0133 100 % Rg and UIS tested ID (A) -100 Material categorization Configuration Sin... See More ⇒

Detailed specifications: SQM50P04-09L, SQM50P06-15L, SQM50P08-25L, SQM60N06-15, SQM60N20-35, SQM85N03-06P, SQM85N10-10, SQM85N15-19, BS170, SQP120N06-06, SQP120N10-09, SQP120N10-3M8, SQP50N06-09L, SQP50P03-07, SQP60N06-15, SQP90P06-07L, SQR40N10-25

Keywords - SQP100P06-9M3L MOSFET specs

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