All MOSFET. SQP100P06-9M3L Datasheet

 

SQP100P06-9M3L Datasheet and Replacement


   Type Designator: SQP100P06-9M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: TO-220AB
 

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SQP100P06-9M3L Datasheet (PDF)

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SQP100P06-9M3L

SQP100P06-9m3Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.0093 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.0133 100 % Rg and UIS testedID (A) -100 Material categorization:Configuration Sin

Datasheet: SQM50P04-09L , SQM50P06-15L , SQM50P08-25L , SQM60N06-15 , SQM60N20-35 , SQM85N03-06P , SQM85N10-10 , SQM85N15-19 , 18N50 , SQP120N06-06 , SQP120N10-09 , SQP120N10-3M8 , SQP50N06-09L , SQP50P03-07 , SQP60N06-15 , SQP90P06-07L , SQR40N10-25 .

History: FQA13N80-F109

Keywords - SQP100P06-9M3L MOSFET datasheet

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