SQP120N10-3M8 Datasheet and Replacement
Type Designator: SQP120N10-3M8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 3070 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-220
SQP120N10-3M8 substitution
SQP120N10-3M8 Datasheet (PDF)
sqp120n10-3m8.pdf

SQP120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-220For definitions of comp
sqp120n10-09.pdf

SQP120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0095 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration Single Material categorization:Package TO-220for definitions of
sqp120n06-06.pdf

SQP120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 119 100 % Rg and UIS testedConfiguration SinglePackage TO-220 Material categorization: for definitions of co
Datasheet: SQM60N06-15 , SQM60N20-35 , SQM85N03-06P , SQM85N10-10 , SQM85N15-19 , SQP100P06-9M3L , SQP120N06-06 , SQP120N10-09 , P0903BDG , SQP50N06-09L , SQP50P03-07 , SQP60N06-15 , SQP90P06-07L , SQR40N10-25 , SQR50N03-06P , SQR50N04-3M8 , SQR50N06-07L .
Keywords - SQP120N10-3M8 MOSFET datasheet
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SQP120N10-3M8 replacement
History: CS10N80F | CS2N60A4H



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