SQP120N10-3M8 MOSFET. Datasheet pdf. Equivalent
Type Designator: SQP120N10-3M8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 125 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 3070 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-220
SQP120N10-3M8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQP120N10-3M8 Datasheet (PDF)
sqp120n10-3m8.pdf
SQP120N10-3m8www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS TestedConfiguration Single Material categorization:DTO-220For definitions of comp
sqp120n10-09.pdf
SQP120N10-09www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0095 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration Single Material categorization:Package TO-220for definitions of
sqp120n06-06.pdf
SQP120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 119 100 % Rg and UIS testedConfiguration SinglePackage TO-220 Material categorization: for definitions of co
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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