All MOSFET. SQR40N10-25 Datasheet

 

SQR40N10-25 Datasheet and Replacement


   Type Designator: SQR40N10-25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 312 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
 

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SQR40N10-25 Datasheet (PDF)

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SQR40N10-25

SQR40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 100 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.025 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.029 Material categorization:ID (A) 40For definitions of com

Datasheet: SQP100P06-9M3L , SQP120N06-06 , SQP120N10-09 , SQP120N10-3M8 , SQP50N06-09L , SQP50P03-07 , SQP60N06-15 , SQP90P06-07L , IRFZ46N , SQR50N03-06P , SQR50N04-3M8 , SQR50N06-07L , SSF22A5E , SSF2418B , SSF2418EBK , SSF2439E , SSF2641S .

History: TPC8029 | R6009ENJ | CRJD390N65GC

Keywords - SQR40N10-25 MOSFET datasheet

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