SQR40N10-25 Datasheet. Specs and Replacement

Type Designator: SQR40N10-25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 312 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-252

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SQR40N10-25 datasheet

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SQR40N10-25

SQR40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 100 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.025 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.029 Material categorization ID (A) 40 For definitions of com... See More ⇒

Detailed specifications: SQP100P06-9M3L, SQP120N06-06, SQP120N10-09, SQP120N10-3M8, SQP50N06-09L, SQP50P03-07, SQP60N06-15, SQP90P06-07L, SI2302, SQR50N03-06P, SQR50N04-3M8, SQR50N06-07L, SSF22A5E, SSF2418B, SSF2418EBK, SSF2439E, SSF2641S

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