TJ150F04M3L Datasheet. Specs and Replacement

Type Designator: TJ150F04M3L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 2350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-220SM

TJ150F04M3L substitution

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TJ150F04M3L datasheet

 ..1. Size:275K  toshiba
 tj150f04m3l.pdf pdf_icon

TJ150F04M3L

TJ150F04M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ150F04M3L TJ150F04M3L TJ150F04M3L TJ150F04M3L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = -10 V) (2) Low leakage c... See More ⇒

 7.1. Size:284K  toshiba
 tj150f06m3l.pdf pdf_icon

TJ150F04M3L

TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ150F06M3L TJ150F06M3L TJ150F06M3L TJ150F06M3L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Relay Drivers Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance RDS(ON) = 4.3 m (typ.) (VGS = -10 V) (3) Low leakage... See More ⇒

Detailed specifications: SSF440M, SSF450M, SSF5508D, SSF5510G, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, IRF9640, TJ15S10M3, TJ200F04M3L, TJ9A10M3, TK100A06N1, TK100A08N1, TK100A10N1, TK100E06N1, TK100E08N1

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