All MOSFET. TJ150F04M3L Datasheet

 

TJ150F04M3L MOSFET. Datasheet pdf. Equivalent


   Type Designator: TJ150F04M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 390 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 2350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-220SM

 TJ150F04M3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TJ150F04M3L Datasheet (PDF)

 ..1. Size:275K  toshiba
 tj150f04m3l.pdf

TJ150F04M3L TJ150F04M3L

TJ150F04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F04M3LTJ150F04M3LTJ150F04M3LTJ150F04M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = -10 V)(2) Low leakage c

 7.1. Size:284K  toshiba
 tj150f06m3l.pdf

TJ150F04M3L TJ150F04M3L

TJ150F06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F06M3LTJ150F06M3LTJ150F06M3LTJ150F06M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V)(3) Low leakage

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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