All MOSFET. TJ150F04M3L Datasheet

 

TJ150F04M3L Datasheet and Replacement


   Type Designator: TJ150F04M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 2350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO-220SM
 

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TJ150F04M3L Datasheet (PDF)

 ..1. Size:275K  toshiba
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TJ150F04M3L

TJ150F04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F04M3LTJ150F04M3LTJ150F04M3LTJ150F04M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = -10 V)(2) Low leakage c

 7.1. Size:284K  toshiba
 tj150f06m3l.pdf pdf_icon

TJ150F04M3L

TJ150F06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F06M3LTJ150F06M3LTJ150F06M3LTJ150F06M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V)(3) Low leakage

Datasheet: SSF440M , SSF450M , SSF5508D , SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , IRF9640 , TJ15S10M3 , TJ200F04M3L , TJ9A10M3 , TK100A06N1 , TK100A08N1 , TK100A10N1 , TK100E06N1 , TK100E08N1 .

History: APT6025SVR

Keywords - TJ150F04M3L MOSFET datasheet

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