All MOSFET. TJ15S10M3 Datasheet

 

TJ15S10M3 Datasheet and Replacement


   Type Designator: TJ15S10M3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: DPAK
 
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TJ15S10M3 Datasheet (PDF)

 ..1. Size:232K  toshiba
 tj15s10m3.pdf pdf_icon

TJ15S10M3

TJ15S10M3MOSFETs Silicon P-Channel MOS (U-MOS)TJ15S10M3TJ15S10M3TJ15S10M3TJ15S10M31. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 100 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS = -1

 9.1. Size:243K  toshiba
 tj15s06m3l.pdf pdf_icon

TJ15S10M3

TJ15S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ15S06M3LTJ15S06M3LTJ15S06M3LTJ15S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 38.5 m (typ.) (VGS = -10 V)(2) Low leakage curren

Datasheet: SSF450M , SSF5508D , SSF5510G , SSF6010G , SSF7008 , TJ100F04M3L , TJ100F06M3L , TJ150F04M3L , 8N60 , TJ200F04M3L , TJ9A10M3 , TK100A06N1 , TK100A08N1 , TK100A10N1 , TK100E06N1 , TK100E08N1 , TK100E10N1 .

History: FQT7N10LTF | 2SK4026

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